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當前位置首頁 » 技術支持 » 帶內置熱敏電阻的NX1210AC-76.8MHz-STD-CTR-1晶體單元的研制

帶內置熱敏電阻的NX1210AC-76.8MHz-STD-CTR-1晶體單元的研制

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掃一掃!帶內置熱敏電阻的NX1210AC-76.8MHz-STD-CTR-1晶體單元的研制掃一掃!
瀏覽:- 發布日期:2023-06-12 18:57:42【
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帶內置熱敏電阻的NX1210AC-76.8MHz-STD-CTR-1晶體單元的研制

We are pleased to inform you that Nihon Dempa Kogyo Co., Ltd. has developed a crystal unit (76.8MHz) with a built-in thermistor for NX1210AC (1.2×1.0×0.55mm-size) and has started sample shipment.

With the shift to 5G of mobile communications, the increasing frequency of clock sources used in  chipsets has resulted in an increasing demand for low phase noise.

In particular, in order to accommodate carrier frequencies such as millimeter waves, it is  necessary to increase the internal multiplication number. However, increasing the multiplication  number increases the noise component, which may lead to reduce the reception sensitivity and  communication efficiency due to degradation of modulation accuracy (signal phase and amplitude  shift).
帶內置熱敏電阻的NX1210AC-76.8MHz-STD-CTR-1晶體單元的研制    To improve phase noise by reducing the number of multiplications, it is required to  increase the frequency of the crystal resonator as the reference oscillator from 38.4MHz to  76.8MHz. In order to achieve further noise reduction, it is also necessary to increase the drive level and  maintain high stable temperature characteristics in addition to high-frequency operation.

To meet these difficult demands, we have realized a compact, high-frequency products by using  high-quality synthetic quartz grown in-house and processing crystal blank with high precision  using our won photolithography processing technology.

This product has the same characteristic as the NDK CRYSTAL NX1612SD_76.8MHz, which has obtained the  first certification for Qualcomm Technologies smartphone chipset (Qualcomm®  SnapdragonTM690, 750G and 480) which is under mass production, and it is a miniaturized  product with a mounting area reduced to 38%.

Began supplying samples in May 2021. (NDK part number:EXS00A-CS10506)
The smartphone market for 5G is rapidly expanding, and we plan to work to ensure stable  supplies of this product while expanding sales.
We will continue to contribute to the realization of a safe, secure and comfortable society through  our quartz device and crystal application equipment businesses.   帶內置熱敏電阻的NX1210AC-76.8MHz-STD-CTR-1晶體單元的研制

NX1210AC

帶內置熱敏電阻的NX1210AC-76.8MHz-STD-CTR-1晶體單元的研制

我們很高興地通知您,Nihon Dempa Kogyo Co.,Ltd.  已為NX1210AC晶振(尺寸1.2×1.0×0.55mm)開發了一個內置熱敏電阻的晶體單元(76.8MHz),并已開始樣品發貨。

隨著移動通信向5G的轉變,芯片組中使用的時鐘源頻率的增加,導致了對低相位噪聲的需求不斷增加。

特別地,為了適應毫米波等載波頻率,需要增加內部乘法數。然而,增加乘法數會增加噪聲分量,由于調制精度(信號相位和幅度轉移)的降低,可能導致接收靈敏度和通信效率的降低。

為了通過減少乘法次數來提高相位噪聲,需要將作為參考諧振器的晶體諧振器的頻率從38.4MHz提高到76.8MHz。為了進一步降噪,除高頻操作外,還需要提高驅動水平,保持高穩定的溫度特性。

帶內置熱敏電阻的NX1210AC-76.8MHz-STD-CTR-1晶體單元的研制為了滿足這些困難的需求,我們利用內部種植的高品質合成石英,利用先進的光刻加工技術,實現了一種緊湊、高頻的產品。

該產品具有與NX1612SD_76.8MHz相同的特點,1210貼片石英晶振NX1612SD_76.8MHz首次獲得高通技術智能手機芯片組(高通®驍龍690,750G和480)認證,正在量產,是一種小型化產品,安裝面積減少到38%。

從2021年5月開始提供樣品。(NDK零件號: EXS00A-CS10506)

5G智能手機市場正在迅速擴張,我們計劃在擴大銷售的同時確保該產品供應穩定。

我們將繼續通過石英設備和水晶應用設備業務,為實現一個安全、安全、舒適的社會做出貢獻。

帶內置熱敏電阻的NX1210AC-76.8MHz-STD-CTR-1晶體單元的研制

NX1210AC晶振特點:

在電路設計中具有內置熱敏電阻的晶體單元

與晶體單元集成以消除空間(傳統上,晶體單元和溫度傳感器安裝在同一塊板上)。

晶體元件和溫度傳感器(熱敏電阻)安裝在同一密閉室中,可以檢測到更接近晶體元件的溫度,從而與傳統的晶體單元相比,提高了頻率溫度補償。

超緊湊,外形低調:1.2×1.0mm,最大值為高: 0.55mm)

表面安裝晶體單元(可用于回流焊)

回流溫度曲線(可用于無鉛焊接)

應用于:通信設備

原廠編碼 晶振廠家 型號 頻率 頻率穩定度 包裝/封裝
NX2016SA-26M-STD-CZS-2 NDK晶振 NX2016SA 26MHz ±25ppm 4-SMD, No Lead
NX2016SA-25.000M-STD-CZS-1 NDK晶振 NX2016SA 25MHz ±15ppm 4-SMD, No Lead
NX2016SA-26M-STD-CZS-1 NDK晶振 NX2016SA 26MHz ±15ppm 4-SMD, No Lead
NX1612AA-26MHZ STD-CSI-3 NDK晶振 NX1612AA 26MHz ±25ppm 4-SMD, No Lead
NX2016SA-26MHZ-EXS00A-CS06025 NDK晶振 NX2016SA 26MHz ±20ppm 4-SMD, No Lead
NX2016AB-26MHZ SB1 NDK晶振 NX2016AB 26MHz ±15ppm 4-SMD, No Lead
NX2016SA-24.9231M-CHP-CZS-9 NDK晶振 NX2016SA 24.9231MHz ±25ppm 4-SMD, No Lead
NX1612SA-32.000MHZ-CHP-CIS-3 NDK晶振 NX1612SA 32MHz ±20ppm 4-SMD, No Lead
NX1612AA-26MHZ-TI2 NDK晶振 NX1612AA 26MHz ±20ppm 4-SMD, No Lead
NX1612AA-26MHZ STD-CSI-1 NDK晶振 NX1612AA 26MHz ±20ppm 石英貼片晶振
NX1612AA-40MHZ-EXS00A-CS05020 NDK晶振 NX1612AA 40MHz ±30ppm 4-SMD, No Lead
NX2016AB-26MHZ ST1 NDK晶振 NX2016AB 26MHz ±20ppm 4-SMD, No Lead
NX2016AB-32MHZ ST2 NDK晶振 NX2016AB 32MHz ±20ppm 4-SMD, No Lead
NX2016AB-36MHZ ST3 NDK晶振 NX2016AB 36MHz ±20ppm 4-SMD, No Lead
NX2016AB-38.4MHZ ST4 NDK晶振 NX2016AB 38.4MHz ±20ppm 4-SMD, No Lead
NX2016AB-26MHZ SB2 NDK晶振 NX2016AB 26MHz ±15ppm 4-SMD, No Lead
NX2016AB-38.4MHZ SW1 NDK晶振 NX2016AB 38.4MHz ±10ppm 4-SMD, No Lead
NX2016AB-38.4MHZ SWW NDK晶振 NX2016AB 38.4MHz ±20ppm 4-SMD, No Lead
NX2016AB-40MHZ SW2 NDK晶振 NX2016AB 40MHz ±10ppm 4-SMD, No Lead
NX2016AB-40MHZ SW2W NDK晶振 NX2016AB 40MHz ±20ppm 4-SMD, No Lead


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